ON Semiconductor MMBT5087LT1G

MMBT5087LT1G ON Semiconductor
MMBT5087LT1G
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
-0.3 V dc
Maximum Collector Base Voltage:
-50 V
Maximum Collector Emitter Voltage:
-50 V
Maximum Base Emitter Saturation Voltage:
0.85 V dc
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
-3 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 (Continuous) mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
MMBT5087
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 50mA 40MHz 300mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100µA, 5V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MMBT5087LT1G. The transistor is a pnp type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum -0.3 v dc collector emitter saturation voltage . Additionally, it has -50 v maximum collector base voltage. Whereas features a -50 v of collector emitter voltage (max). In addition, the product has a maximum 0.85 v dc base emitter saturation voltage . It carries 20 mhz of maximum operating frequency. It features a -3 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 (continuous) ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 51 weeks of manufacturer standard lead time. Base Part Number: mmbt5087. It features bipolar (bjt) transistor pnp 50v 50ma 40mhz 300mw surface mount sot-23-3 (to-236). Furthermore, 250 @ 100µa, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 40mhz. The 300mv @ 1ma, 10ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 50ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet MMBT5087LT1G(Technical Reference)
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Mold Compound 02/Apr/2020(PCN Assembly/Origin)
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Copper Wire 19/May/2010(PCN Design/Specification)
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SOT23 16/Sep/2016(PCN Design/Specification)
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MMBT5087LT(Datasheets)

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