Microsemi Corporation 2N2484
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
50mA
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce:
225 @ 10mA, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100µA, 1mA
Supplier Device Package:
TO-18
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
360mW
Customer Reference:
Package / Case:
TO-206AA, TO-18-3 Metal Can
Current - Collector Cutoff (Max):
2nA
Manufacturer:
Microsemi Corporation
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FAQs
Yes. You can also search 2N2484 on website for other similar products.
We accept all major payment methods for all products including ET11765060. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N2484 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N2484. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N2484.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11765060 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11765060.
Yes. We ship 2N2484 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N2484. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 50ma. It features bipolar (bjt) transistor npn 60v 50ma 360mw through hole to-18. Furthermore, 225 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 300mv @ 100µa, 1ma is the maximum Vce saturation. to-18 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 360mw. Moreover, the product comes in to-206aa, to-18-3 metal can. In addition, 2na is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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