ON Semiconductor MMBTA14LT1G
Product Information
Minimum DC Current Gain:
5000
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Continuous Collector Current:
300 mA
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Collector Cut-off Current:
100nA
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
10 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
46 Weeks
Base Part Number:
MMBTA14
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 30V 300mA 125MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
125MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
300mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor MMBTA14LT1G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor MMBTA14LT1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11577369 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11577369.
Yes. We ship MMBTA14LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MMBTA14LT1G. It features up to 5000 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum 300 ma continuous collector current . Additionally, it has 30 v maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). It has a maximum 100na collector cut-off current . In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 1.5 v collector emitter saturation voltage . It features a 10 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 46 weeks of manufacturer standard lead time. Base Part Number: mmbta14. It features bipolar (bjt) transistor npn - darlington 30v 300ma 125mhz 225mw surface mount sot-23-3 (to-236). Furthermore, 20000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 125mhz. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 300ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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