Transistor Type:
PNP
Dimensions:
10.63 x 4.9 x 16.12mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
28 W
Maximum Collector Emitter Saturation Voltage:
1.2 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
MJF32
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 3A 3MHz 2W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
300µA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJF32CG. The transistor is a pnp type. The given dimensions of the product include 10.63 x 4.9 x 16.12mm. The product is available in through hole configuration. Provides up to 28 w maximum power dissipation. The product has a maximum 1.2 v dc collector emitter saturation voltage . Additionally, it has 100 v dc maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: mjf32. It features bipolar (bjt) transistor pnp 100v 3a 3mhz 2w through hole to-220fp. Furthermore, 10 @ 3a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 1.2v @ 375ma, 3a is the maximum Vce saturation. to-220fp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3 full pack. The maximum collector current includes 3a. In addition, 300µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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