Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Saturation Voltage:
2 V dc
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
60 V dc
Maximum Base Emitter Saturation Voltage:
4.5 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N6043
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 60V 8A 75W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 16mA, 4A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
75W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
20µA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N6043G. The transistor is a npn type. The given dimensions of the product include 10.53 x 4.83 x 15.75mm. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. The product has a maximum 2 v dc collector emitter saturation voltage . Additionally, it has 60 v dc maximum collector base voltage. Whereas features a 60 v dc of collector emitter voltage (max). In addition, the product has a maximum 4.5 v dc base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 8 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n6043. It features bipolar (bjt) transistor npn - darlington 60v 8a 75w through hole to-220ab. Furthermore, 1000 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 2v @ 16ma, 4a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 75w. Moreover, the product comes in to-220-3. The maximum collector current includes 8a. In addition, 20µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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