ON Semiconductor 2N6667G
Product Information
Minimum DC Current Gain:
1000
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
4.5 V dc
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N6667
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11221988 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11221988.
Yes. We ship 2N6667G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N6667G. It features up to 1000 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 65 w maximum power dissipation. The product has a maximum 10 a continuous collector current . Additionally, it has 60 v dc maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v dc base emitter saturation voltage . In addition, the height is 15.75mm. Furthermore, the product is 4.82mm wide. Its accurate length is 10.28mm. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 3 v dc collector emitter saturation voltage . It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n6667. It features bipolar (bjt) transistor pnp - darlington 60v 10a 2w through hole to-220ab. Furthermore, 1000 @ 5a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The 3v @ 100ma, 10a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3. The maximum collector current includes 10a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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