Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Saturation Voltage:
3.5 V dc
Maximum Collector Base Voltage:
70 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
5 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
5 Weeks
Base Part Number:
2N6490
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 15A 5MHz 1.8W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 5A, 4V
Transistor Type:
PNP
Frequency - Transition:
5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 5A, 15A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.8W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N6490G. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. The product has a maximum 3.5 v dc collector emitter saturation voltage . Additionally, it has 70 v dc maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It carries 5 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 15 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 5 weeks of manufacturer standard lead time. Base Part Number: 2n6490. It features bipolar (bjt) transistor pnp 60v 15a 5mhz 1.8w through hole to-220ab. Furthermore, 20 @ 5a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 5mhz. The 3.5v @ 5a, 15a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.8w. Moreover, the product comes in to-220-3. The maximum collector current includes 15a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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