ON Semiconductor 50C02SS-TL-E

50C02SS-TL-E ON Semiconductor
50C02SS-TL-E
50C02SS-TL-E
ON Semiconductor

Product Information

Transistor Type:
NPN
Dimensions:
1.4 x 0.8 x 0.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Saturation Voltage:
100 mV
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SSFP
Number of Elements per Chip:
1
Maximum DC Collector Current:
400 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
50C02
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 400mA 500MHz 200mW Surface Mount 3-SSFP
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 10mA, 2V
Transistor Type:
NPN
Frequency - Transition:
500MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
100mV @ 10mA, 100mA
Supplier Device Package:
3-SSFP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Current - Collector (Ic) (Max):
400mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is 50C02SS-TL-E. The transistor is a npn type. The given dimensions of the product include 1.4 x 0.8 x 0.6mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. The product has a maximum 100 mv collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of ssfp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 400 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 50c02. It features bipolar (bjt) transistor npn 50v 400ma 500mhz 200mw surface mount 3-ssfp. Furthermore, 300 @ 10ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 500mhz. The 100mv @ 10ma, 100ma is the maximum Vce saturation. 3-ssfp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in 3-smd, flat lead. The maximum collector current includes 400ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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50C02SS(Datasheets)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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