ON Semiconductor BD437G
Product Information
Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
36 W
Maximum Collector Emitter Saturation Voltage:
0.8 V dc
Maximum Collector Base Voltage:
45 V dc
Maximum Collector Emitter Voltage:
45 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD437
Detailed Description:
Bipolar (BJT) Transistor NPN 45V 4A 3MHz 36W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
85 @ 500mA, 1V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
800mV @ 300mA, 3A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
36W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BD437G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BD437G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10972054 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10972054.
Yes. We ship BD437G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BD437G. The transistor is a npn type. The given dimensions of the product include 7.8 x 3 x 11.1mm. The product is available in through hole configuration. Provides up to 36 w maximum power dissipation. The product has a maximum 0.8 v dc collector emitter saturation voltage . Additionally, it has 45 v dc maximum collector base voltage. Whereas features a 45 v dc of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-225. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 4 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: bd437. It features bipolar (bjt) transistor npn 45v 4a 3mhz 36w through hole to-225aa. Furthermore, 85 @ 500ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 800mv @ 300ma, 3a is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 45v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 36w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 100µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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