ON Semiconductor NSS30101LT1G
Product Information
Transistor Type:
NPN
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
310 mW
Maximum Collector Emitter Saturation Voltage:
0.2 V
Maximum Collector Base Voltage:
5 V dc
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
1.1 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
50 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
NSS301
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 500mA, 5V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
200mV @ 100mA, 1A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
310mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship NSS30101LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSS30101LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 2.64 x 1.11mm. The product is available in surface mount configuration. Provides up to 310 mw maximum power dissipation. The product has a maximum 0.2 v collector emitter saturation voltage . Additionally, it has 5 v dc maximum collector base voltage. Whereas features a 30 v of collector emitter voltage (max). In addition, the product has a maximum 1.1 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a 50 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: nss301. It features bipolar (bjt) transistor npn 30v 1a 100mhz 310mw surface mount sot-23-3 (to-236). Furthermore, 300 @ 500ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 200mv @ 100ma, 1a is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 310mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 1a. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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