Microsemi Corporation 2N2946AUB
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
100mA
Detailed Description:
Bipolar (BJT) Transistor PNP 35V 100mA 400mW Surface Mount UB
Transistor Type:
PNP
Mounting Type:
Surface Mount
Current - Collector Cutoff (Max):
10µA (ICBO)
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package:
UB
Voltage - Collector Emitter Breakdown (Max):
35V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
400mW
Customer Reference:
Package / Case:
3-SMD, No Lead
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 1mA, 500mV
Manufacturer:
Microsemi Corporation
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FAQs
Yes. You can also search 2N2946AUB on website for other similar products.
We accept all major payment methods for all products including ET10623243. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N2946AUB directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N2946AUB. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N2946AUB.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10623243 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10623243.
Yes. We ship 2N2946AUB Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N2946AUB. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. It features bipolar (bjt) transistor pnp 35v 100ma 400mw surface mount ub. The transistor is a pnp type. The product is available in surface mount configuration. In addition, 10µa (icbo) is the maximum current at collector cutoff. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. ub is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 35v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 400mw. Moreover, the product comes in 3-smd, no lead. Furthermore, 50 @ 1ma, 500mv is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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