Minimum DC Current Gain:
80
Transistor Type:
NPN
Dimensions:
1.25 x 0.85 x 0.55mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
338 mW
Maximum Continuous Collector Current:
100 mA
Maximum Emitter Base Voltage:
6 V
Maximum Collector Emitter Voltage:
50 V
Height:
0.55mm
Width:
0.85mm
Length:
1.25mm
Package Type:
SOT-723
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.25 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
100 kΩ
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
DTC115
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 260mW Surface Mount SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
100 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SOT-723
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
100 kOhms
Power - Max:
260mW
Customer Reference:
Package / Case:
SOT-723
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
