ON Semi NSS40301MDR2G Dual NPN Transistor, 3 A, 40 V, 8-Pin SOIC
Product Information
Transistor Type:
NPN
Dimensions:
5 x 4 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
783 mW
Maximum Collector Base Voltage:
40 V dc
Maximum Collector Emitter Voltage:
40 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
Current - Collector (Ic) (Max):
3A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
40V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 1A, 2V
edacadModel:
NSS40301MDR2G Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
115mV @ 200mA, 2A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1961251
Transistor Type:
2 NPN (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
653mW
Base Product Number:
NSS40301
ECCN:
EAR99
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This is ON Semi Dual NPN Transistor 3 A 40 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is NSS40301MDR2G. The transistor is a npn type. The given dimensions of the product include 5 x 4 x 1.5mm. The product is available in surface mount configuration. Provides up to 783 mw maximum power dissipation. Additionally, it has 40 v dc maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of soic. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. The maximum collector current includes 3a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 40v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Furthermore, 180 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 115mv @ 200ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 npn (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. 8-soic is the supplier device package value. The maximum power of the product is 653mw. Moreover, it corresponds to nss40301, a base product number of the product. The product is designated with the ear99 code number.
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