onsemi NST65011MW6T1G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

NST65011MW6T1G onsemi  Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363
onsemi

Product Information

Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Voltage:
65 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
80 V
Pin Count:
6
Transistor Configuration:
Isolated
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
65V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
edacadModel:
NST65011MW6T1G Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/5761755
Transistor Type:
2 NPN (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
380mW
Base Product Number:
NST65011
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual NPN Transistor 100 mA 65 V 6-Pin SOT-363 manufactured by onsemi. The manufacturer part number is NST65011MW6T1G. The transistor is a npn type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. Whereas features a 65 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has 80 v maximum collector base voltage. It contains 6 pins. The product offers isolated transistor configuration. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 65v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 200 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 600mv @ 5ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 npn (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. In addition, 15na (icbo) is the maximum current at collector cutoff. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum power of the product is 380mw. Moreover, it corresponds to nst65011, a base product number of the product. The product is designated with the ear99 code number.

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NST65011MW6T1G Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Wire Chg Coating Chg 6/Dec/2018(PCN Assembly/Origin)
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NST65011MW6(Datasheets)
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onsemi RoHS(Environmental Information)

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