ON Semiconductor NSS40302PDR2G
Product Information
Transistor Type:
NPN + PNP
Dimensions:
5 x 4 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
783 mW
Maximum Collector Emitter Saturation Voltage:
0.115 V
Maximum Collector Base Voltage:
-40 V, 40 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-7 V, 6 V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
NSS403
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 1A, 2V
Transistor Type:
NPN, PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
115mV @ 200mA, 2A
Supplier Device Package:
8-SOIC
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
653mW
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship NSS40302PDR2G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSS40302PDR2G. The transistor is a npn + pnp type. The given dimensions of the product include 5 x 4 x 1.5mm. The product is available in surface mount configuration. Provides up to 783 mw maximum power dissipation. The product has a maximum 0.115 v collector emitter saturation voltage . Additionally, it has -40 v, 40 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). In addition, the product has a maximum 0.9 v base emitter saturation voltage . It carries 100 mhz of maximum operating frequency. It features a -7 v, 6 v of maximum emitter base voltage. The package is a sort of soic. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: nss403. It features bipolar (bjt) transistor array npn, pnp 40v 3a 100mhz 653mw surface mount 8-soic. Furthermore, 180 @ 1a, 2v is the minimum DC current gain at given voltage. The transistor is a npn, pnp type. The transition frequency of the product is 100mhz. The 115mv @ 200ma, 2a is the maximum Vce saturation. 8-soic is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 653mw. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum collector current includes 3a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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