NXP USA Inc. PQMD12Z
Product Information
Resistor - Base (R1):
47kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
47kOhms
Package / Case:
6-XFDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Frequency - Transition:
230MHz, 180MHz
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010B-6
Power - Max:
350mW
Base Product Number:
PQMD12
ECCN:
EAR99
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FAQs
Yes. You can also search PQMD12Z on website for other similar products.
We accept all major payment methods for all products including ET22562105. Please check your shopping cart at the time of order.
You can order NXP USA Inc. brand products with PQMD12Z directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of NXP USA Inc. PQMD12Z. You can also check on our website or by contacting our customer support team for further order details on NXP USA Inc. PQMD12Z.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22562105 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22562105.
Yes. We ship PQMD12Z Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PQMD12Z. Resistor - Base - 47kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in 6-xfdfn exposed pad. Furthermore, 80 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 230mhz, 180mhz. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010b-6 is the supplier device package value. The maximum power of the product is 350mw. Moreover, it corresponds to pqmd12, a base product number of the product. The product is designated with the ear99 code number.
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