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This is manufactured by NXP USA Inc.. The manufacturer part number is PQMD12Z. Resistor - Base - 47kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in 6-xfdfn exposed pad. Furthermore, 80 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 230mhz, 180mhz. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010b-6 is the supplier device package value. The maximum power of the product is 350mw. Moreover, it corresponds to pqmd12, a base product number of the product. The product is designated with the ear99 code number.
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