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onsemi MUN5213DW1T1G

MUN5213DW1T1G onsemi
MUN5213DW1T1G
MUN5213DW1T1G
onsemi

Product Information

Base-Emitter Resistor:
47kΩ
Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
385 mW
Maximum Collector Emitter Voltage:
50 V dc
Package Type:
SOT-363
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
1
Transistor Configuration:
Dual
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
47 kΩ
Resistor - Base (R1):
47kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
47kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
edacadModel:
MUN5213DW1T1G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1749060
Transistor Type:
2 NPN - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Power - Max:
250mW
Base Product Number:
MUN5213
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is MUN5213DW1T1G. It has about 47kω base-emitter resistor . The transistor is a npn type. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product is available in surface mount configuration. Provides up to 385 mw maximum power dissipation. Whereas features a 50 v dc of collector emitter voltage (max). The package is a sort of sot-363. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 1 resistor ratio . The product offers dual transistor configuration. It has a maximum operating temperature of +150 °c. It contains 6 pins. Whereas, it has a typical 47 kω input resistor . Resistor - Base - 47kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 80 @ 5ma, 10v is the minimum DC current gain at given voltage. The 250mv @ 300µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 npn - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 9 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum power of the product is 250mw. Moreover, it corresponds to mun5213, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet MUN5213DW1T1G(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly 30/Jul/2020(PCN Assembly/Origin)
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Copper Wire 08/Jun/2009(PCN Design/Specification)
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MUN5213DW1, NSBC144EDxx(Datasheets)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi MUN5213DW1T1G. You can also check on our website or by contacting our customer support team for further order details on onsemi MUN5213DW1T1G.
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Yes. We ship MUN5213DW1T1G Internationally to many countries around the world.