Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
256 mW
Maximum Collector Emitter Voltage:
50 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
0.21
Transistor Configuration:
Isolated
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Typical Input Resistor:
10 kΩ
Resistor - Base (R1):
10kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
47kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
Frequency - Transition:
-
title:
MUN5214DW1T1G
REACH Status:
REACH Unaffected
edacadModel:
MUN5214DW1T1G Models
edacadModelUrl:
/en/models/1482727
Manufacturer:
onsemi
Transistor Type:
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
-
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
-
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
250mW
Base Product Number:
MUN5214
ECCN:
EAR99
