NXP USA Inc. PMZB550UNE315
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
0.95V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs:
1.1 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
670mOhm @ 590mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±8V
Power Dissipation (Max):
310mW (Ta), 1.67W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
30.3 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Current - Continuous Drain (Id) @ 25°C:
590mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. We ship PMZB550UNE315 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PMZB550UNE315. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 0.95v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-101, sot-883. The maximum gate charge and given voltages include 1.1 nc @ 4.5 v. It has a maximum Rds On and voltage of 670mohm @ 590ma, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±8v. The product carries maximum power dissipation 310mw (ta), 1.67w (tc). The product's input capacitance at maximum includes 30.3 pf @ 15 v. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The continuous current drain at 25°C is 590ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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