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Nexperia USA Inc. PMPB95ENEA/F,115

PMPB95ENEA-F-115 Nexperia USA Inc. PMPB95ENEA/F,115
Nexperia USA Inc.

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
105mOhm @ 2.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14.9 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Power Dissipation (Max):
1.6W (Ta), 15.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
504 pF @ 40 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DFN2020MD-6
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMPB95ENEA/F,115. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2.7v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. It has a maximum Rds On and voltage of 105mohm @ 2.8a, 10v. The maximum gate charge and given voltages include 14.9 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1.6w (ta), 15.6w (tc). The product's input capacitance at maximum includes 504 pf @ 40 v. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn2020md-6 is the supplier device package value. The continuous current drain at 25°C is 2.8a (ta). This product use mosfet (metal oxide) technology.

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PMPB95ENEA(Datasheets)

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