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NXP USA Inc. PMPB12UNE115

PMPB12UNE115 NXP USA Inc.
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
0.9V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 7.9A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
470mW (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1220 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN2020MD-6
Current - Continuous Drain (Id) @ 25°C:
7.9A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMPB12
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMPB12UNE115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 0.9v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. The maximum gate charge and given voltages include 17 nc @ 10 v. It has a maximum Rds On and voltage of 16mohm @ 7.9a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 470mw (ta), 12.5w (tc). The product's input capacitance at maximum includes 1220 pf @ 10 v. The product is available in surface mount configuration. dfn2020md-6 is the supplier device package value. The continuous current drain at 25°C is 7.9a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmpb12, a base product number of the product. The product is designated with the ear99 code number.

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PMPB12UNE(Datasheets)

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