NXP USA Inc. PMDXB1200UPE147

Enrgtech Part No: ET22561935
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Manufacturer Part No:
PMDXB1200UPE147
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Manufacturer: NXP USA Inc.

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Product Information

The PMDXB1200UPE147 by NXP USA Inc. is a specialised Field-Effect Transistor (FET) designed for high-efficiency performance and optimised for voltage regulation in power management applications. It is an advanced FET for complex electronics systems with exceptional conductivity and low power dissipation.

FET Feature:

Standard

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

0.95V @ 250µA

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

6-XFDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs:

1.2nC @ 4.5V

Rds On (Max) @ Id, Vgs:

1.4Ohm @ 410mA, 4.5V

Current - Continuous Drain (Id) @ 25°C:

410mA (Ta)

Configuration:

2 P-Channel

Package:

Bulk

Drain to Source Voltage (Vdss):

30V

Input Capacitance (Ciss) (Max) @ Vds:

43.2pF @ 15V

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The NXP USA Inc. PMDXB1200UPE147 is a specialised dual P-channel enhancement mode Field-Effect Transistor (FET) that offers enhanced performance and versatility for various electronic applications. With its dual configuration, low on-resistance, high voltage rating, and fast switching speed, this FET is well-suited for power management, motor control, LED lighting, and switching circuits. NXP USA Inc. continues to provide innovative semiconductor solutions, catering to the needs of the ever-evolving electronics industry.

Key Specifications of NXP USA Inc. PMDXB1200UPE147:

The PMDXB1200UPE147 is designed with several notable features and specifications, making it suitable for a wide range of applications. Some key features include:

Dual P-channel Configuration: The device consists of two P-channel FETs in a single package, allowing for increased functionality and flexibility in circuit designs.
Low On-Resistance: The FET offers low on-resistance, reducing power losses and improving efficiency in high-current applications.
High Voltage Rating: The PMDXB1200UPE147 has a high voltage rating, enabling it to handle elevated voltages, making it suitable for applications requiring robustness.
Fast Switching Speed: With its fast switching characteristics, the FET ensures quick response times, making it suitable for high-speed switching applications.

Application Versatility of NXP USA Inc. PMDXB1200UPE147:

The PMDXB1200UPE147 FET is widely employed in various electronic applications due to its performance and versatility. Some typical applications include:

Power Management: The FET is used in power management circuits, such as battery chargers, voltage regulators, and DC-DC converters.
Motor Control: It can be utilised in motor control circuits, offering efficient control and driving capabilities for motors in automotive, industrial, and consumer electronics.
LED Lighting: The FET finds application in LED lighting systems, enabling efficient power control and dimming functionality.
Switching Circuits: Its fast-switching speed and low on-resistance make it ideal for high-speed switching circuits, such as solid-state relays and audio amplifiers.

PMDXB1200UPE(Datasheets)

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You can order NXP USA Inc. brand products with PMDXB1200UPE147 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET22561935 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22561935.

Yes. We ship PMDXB1200UPE147 Internationally to many countries around the world.