NXP USA Inc. PDTA113ZM315
Product Information
Resistor - Base (R1):
1 kOhms
HTSUS:
8542.21.0095
Current - Collector (Ic) (Max):
100 mA
Resistor - Emitter Base (R2):
10 kOhms
Package / Case:
SC-101, SOT-883
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Surface Mount
Series:
PDTA113Z
Supplier Device Package:
DFN1006-3
Power - Max:
250 mW
ECCN:
EAR99
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FAQs
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET22561563 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22561563.
Yes. We ship PDTA113ZM315 Internationally to many countries around the world.
This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA113ZM315. Resistor - Base - 1 kohms. It is assigned with possible HTSUS value of 8542.21.0095. The maximum collector current includes 100 ma. Resistor - Emittor Base (R2) - 10 kohms. Moreover, the product comes in sc-101, sot-883. Furthermore, 35 @ 5ma, 5v is the minimum DC current gain at given voltage. The 150mv @ 500µa, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a pnp - pre-biased type. It is shipped in bulk package . In addition, 1µa is the maximum current at collector cutoff. The product is available in surface mount configuration. The product pdta113z, is a highly preferred choice for users. dfn1006-3 is the supplier device package value. The maximum power of the product is 250 mw. The product is designated with the ear99 code number.
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