Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 mW
Maximum Continuous Collector Current:
-100 mA
Maximum Emitter Base Voltage:
-10 V
Maximum Collector Emitter Voltage:
-50 V
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
Resistor - Base (R1):
4.7 kOhms
Current - Collector (Ic) (Max):
100 mA
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Emitter Base (R2):
4.7 kOhms
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10mA, 5V
Frequency - Transition:
200 MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Pre-Biased
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
300 mW
Base Product Number:
FJN430
ECCN:
EAR99
This is PNP Digital Transistor -100 mA -50 V 4.7 kΩ Ratio Of 1 3-Pin TO-92 manufactured by Fairchild Semiconductor. The manufacturer part number is FJN4301RTA. It features up to 20 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum -100 ma continuous collector current . It features a -10 v of maximum emitter base voltage. Whereas features a -50 v of collector emitter voltage (max). In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. The package is a sort of to-92. It consists of 1 elements per chip. The product has a maximum -0.3 v collector emitter saturation voltage . In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 4.7 kω input resistor . Resistor - Base - 4.7 kohms. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 0000.00.0000. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 20 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200 mhz. The 300mv @ 500µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - pre-biased type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 300 mw. Moreover, it corresponds to fjn430, a base product number of the product. The product is designated with the ear99 code number.
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