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Toshiba Semiconductor and Storage GT30J65MRB,S1E

GT30J65MRB-S1E Toshiba Semiconductor and Storage GT30J65MRB,S1E
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
60 A
RoHS Status:
ROHS3 Compliant
Switching Energy:
1.4mJ (on), 220µJ (off)
Vce(on) (Max) @ Vge, Ic:
1.8V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max):
650 V
Td (on/off) @ 25°C:
Operating Temperature:
175°C (TJ)
Input Type:
Package / Case:
TO-3P-3, SC-65-3
Gate Charge:
70 nC
Reverse Recovery Time (trr):
200 ns
REACH Status:
REACH Unaffected
Test Condition:
400V, 15A, 56Ohm, 15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
12 Weeks
IGBT Type:
Mounting Type:
Through Hole
Supplier Device Package:
Power - Max:
200 W
Base Product Number:
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is GT30J65MRB,S1E. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Provide switching energy up to 1.4mj (on), 220µj (off). Features 1.8v @ 15v, 30a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 75ns/400ns. The product has 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 70 nc gate charge. It has a trr (reverse recovery time) of 200 ns. In addition, it is reach unaffected. Test condition included 400v, 15a, 56ohm, 15v. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. The product is available in through hole configuration. to-3p(n) is the supplier device package value. The maximum power of the product is 200 w. Moreover, it corresponds to gt30j65, a base product number of the product. The product is designated with the ear99 code number.


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