Dimensions:
10.4 x 9.35 x 4.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
65 W
Maximum Collector Emitter Voltage:
600 V
Channel Type:
N
Maximum Continuous Collector Current:
10 A
Maximum Gate Emitter Voltage:
±20V
Package Type:
D2PAK (TO-263)
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
20 A
Reverse Recovery Time (trr):
22 ns
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 5A
Voltage - Collector Emitter Breakdown (Max):
600 V
Td (on/off) @ 25°C:
14.2ns/72ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge:
19.2 nC
title:
STGB10NC60HDT4
REACH Status:
REACH Unaffected
edacadModel:
STGB10NC60HDT4 Models
Switching Energy:
31.8µJ (on), 95µJ (off)
edacadModelUrl:
/en/models/1653981
Test Condition:
390V, 5A, 10Ohm, 15V
Manufacturer:
STMicroelectronics
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
IGBT Type:
-
Current - Collector Pulsed (Icm):
30 A
Mounting Type:
Surface Mount
Series:
PowerMESH™
Supplier Device Package:
D2PAK
Packaging:
Tape & Reel (TR)
Power - Max:
65 W
Base Product Number:
STGB10
ECCN:
EAR99
