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This is manufactured by Renesas Electronics Corporation. The manufacturer part number is UPA2680T1E-E2-AT. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in 6-vdfn exposed pad. It has a maximum Rds On and voltage of 50mohm @ 3a, 10v. The maximum gate charge and given voltages include 3.1 nc @ 4.5 v. The typical Vgs (th) (max) of the product is 2v @ 250µa. It carries FET type n-channel. The product has a 20 v drain to source voltage. The product's input capacitance at maximum includes 190 pf @ 10 v. The product is available in surface mount configuration. 6-mlp (3x3) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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