Rohm Semiconductor R6061YNXC7G

R6061YNXC7G Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
6V @ 3.5mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
60mOhm @ 13A, 12V
Gate Charge (Qg) (Max) @ Vgs:
76 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V, 12V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3700 pF @ 100 V
standardLeadTime:
18 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FM
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is R6061YNXC7G. The typical Vgs (th) (max) of the product is 6v @ 3.5ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 60mohm @ 13a, 12v. The maximum gate charge and given voltages include 76 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v, 12v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 100w (tc). The product's input capacitance at maximum includes 3700 pf @ 100 v. It has a long 18 weeks standard lead time. The product is available in through hole configuration. to-220fm is the supplier device package value. The continuous current drain at 25°C is 26a (tc). This product use mosfet (metal oxide) technology.

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FAQs

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Yes. We ship R6061YNXC7G Internationally to many countries around the world.