Rohm Semiconductor R6086YNZC17

R6086YNZC17 Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6V @ 4.6mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Rds On (Max) @ Id, Vgs:
44mOhm @ 17A, 12V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V, 12V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5100 pF @ 100 V
standardLeadTime:
18 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PF
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Rohm Semiconductor. The manufacturer part number is R6086YNZC17. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 6v @ 4.6ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3 full pack. The maximum gate charge and given voltages include 110 nc @ 10 v. It has a maximum Rds On and voltage of 44mohm @ 17a, 12v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v, 12v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 114w (tc). The product's input capacitance at maximum includes 5100 pf @ 100 v. It has a long 18 weeks standard lead time. The product is available in through hole configuration. to-3pf is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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R6086YNZ(Datasheets)

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