Vishay Siliconix SISS5108DN-T1-GE3
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
7.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1150 pF @ 50 V
standardLeadTime:
62 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8S
Current - Continuous Drain (Id) @ 25°C:
15.4A (Ta), 55.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS5108
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search SISS5108DN-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET24597588. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SISS5108DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SISS5108DN-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SISS5108DN-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24597588 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24597588.
Yes. We ship SISS5108DN-T1-GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SISS5108DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8s. The maximum gate charge and given voltages include 23 nc @ 10 v. It has a maximum Rds On and voltage of 10.5mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 65.7w (tc). The product's input capacitance at maximum includes 1150 pf @ 50 v. It has a long 62 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8s is the supplier device package value. The continuous current drain at 25°C is 15.4a (ta), 55.9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to siss5108, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.