Goford Semiconductor G2K3N10G

G2K3N10G Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-243AA
Rds On (Max) @ Id, Vgs:
220mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
436 pF @ 50 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-89
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Goford Semiconductor. The manufacturer part number is G2K3N10G. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-243aa. It has a maximum Rds On and voltage of 220mohm @ 2a, 10v. The maximum gate charge and given voltages include 13 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 1.5w (tc). The product's input capacitance at maximum includes 436 pf @ 50 v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sot-89 is the supplier device package value. The continuous current drain at 25°C is 2.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

pdf icon
G2K3N10G(Datasheets)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search G2K3N10G on website for other similar products.
We accept all major payment methods for all products including ET24068039. Please check your shopping cart at the time of order.
You can order Goford Semiconductor brand products with G2K3N10G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Goford Semiconductor G2K3N10G. You can also check on our website or by contacting our customer support team for further order details on Goford Semiconductor G2K3N10G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24068039 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Goford Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24068039.
Yes. We ship G2K3N10G Internationally to many countries around the world.