Inventchip IV1Q12160T4
Product Information
FET Feature:
-
Vgs(th) (Max) @ Id:
2.9V @ 1.9mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 20 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
195mOhm @ 10A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+20V, -5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
138W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
885 pF @ 800 V
standardLeadTime:
12 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship IV1Q12160T4 Internationally to many countries around the world.
This is manufactured by Inventchip. The manufacturer part number is IV1Q12160T4. The typical Vgs (th) (max) of the product is 2.9v @ 1.9ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. The maximum gate charge and given voltages include 43 nc @ 20 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 195mohm @ 10a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +20v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 138w (tc). The product's input capacitance at maximum includes 885 pf @ 800 v. It has a long 12 weeks standard lead time. The product is available in through hole configuration. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
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