Renesas 2SK1958-T1-A

Renesas

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 10µA
Operating Temperature:
150°C
Package / Case:
8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
12Ohm @ 10mA, 4V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Package:
Bulk
Drain to Source Voltage (Vdss):
16 V
Vgs (Max):
±7V
Input Capacitance (Ciss) (Max) @ Vds:
10 pF @ 3 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-MMPAK
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Power Dissipation (Max):
150mW (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Renesas. The manufacturer part number is 2SK1958-T1-A. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.1v @ 10µa. The product has 150°c operating temperature range. Moreover, the product comes in 8-tssop, 8-msop (0.110", 2.80mm width). The product is rohs non-compliant. In addition, it is vendor undefined. It has a maximum Rds On and voltage of 12ohm @ 10ma, 4v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. It is shipped in bulk package . The product has a 16 v drain to source voltage. The maximum Vgs rate is ±7v. The product's input capacitance at maximum includes 10 pf @ 3 v. The product is available in surface mount configuration. 8-mmpak is the supplier device package value. The continuous current drain at 25°C is 100ma (ta). The product carries maximum power dissipation 150mw (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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