NXP USA Inc. PMN45EN,135

PMN45EN-135 NXP USA Inc. PMN45EN,135
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SC-74, SOT-457
Rds On (Max) @ Id, Vgs:
40mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
6.1 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
495 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
6-TSOP
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PMN45EN,135. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-74, sot-457. It has a maximum Rds On and voltage of 40mohm @ 3a, 10v. The maximum gate charge and given voltages include 6.1 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is 20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.75w (tc). The product's input capacitance at maximum includes 495 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 6-tsop is the supplier device package value. The continuous current drain at 25°C is 5.2a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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