Fairchild Semiconductor FQB55N06TM

FQB55N06TM Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
20mOhm @ 27.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Power Dissipation (Max):
3.75W (Ta), 133W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1690 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQB55N06TM. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 20mohm @ 27.5a, 10v. The maximum gate charge and given voltages include 46 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±25v. The product carries maximum power dissipation 3.75w (ta), 133w (tc). The product's input capacitance at maximum includes 1690 pf @ 25 v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 55a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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