Fairchild Semiconductor FDI047AN08A0

FDI047AN08A0 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
138 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Power Dissipation (Max):
310W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6600 pF @ 25 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-262 (I2PAK)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDI047AN08A0. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. The maximum gate charge and given voltages include 138 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 4.7mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tube package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 310w (tc). The product's input capacitance at maximum includes 6600 pf @ 25 v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. to-262 (i2pak) is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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