onsemi NTH4L022N120M3S
Product Information
Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
68 A
Mounting Type:
Through Hole
Transistor Material:
SiC
Maximum Gate Threshold Voltage:
4.4V
Maximum Drain Source Resistance:
0.03 Ω
Package Type:
TO-247-4L
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.4V @ 20mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
30mOhm @ 40A, 18V
Gate Charge (Qg) (Max) @ Vgs:
151 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTH4L022N120M3S Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/15667528
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
352W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3175 pF @ 800 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Current - Continuous Drain (Id) @ 25°C:
68A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NTH4L022N120M3S. You can also check on our website or by contacting our customer support team for further order details on onsemi NTH4L022N120M3S.
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Yes. We ship NTH4L022N120M3S Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTH4L022N120M3S. It has a maximum of 1200 v drain source voltage. While 68 a of maximum continuous drain current. The product is available in through hole configuration. The transistor is manufactured from highly durable sic material. The product carries 4.4v of maximum gate threshold voltage. It provides up to 0.03 ω maximum drain source resistance. The package is a sort of to-247-4l. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.4v @ 20ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 30mohm @ 40a, 18v. The maximum gate charge and given voltages include 151 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 352w (tc). The product's input capacitance at maximum includes 3175 pf @ 800 v. It has a long 26 weeks standard lead time. to-247-4l is the supplier device package value. The continuous current drain at 25°C is 68a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
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