Forward Voltage Vf:
1.2V
Width:
5.2 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
151nC
Package Type:
TO-247
Maximum Continuous Drain Current Id:
68A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
30mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
1200V
Channel Type:
Type N
Length:
15.8mm
Standards/Approvals:
RoHS
Pin Count:
4
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
325W
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
-0.45 V
Series:
NTH
Height:
41.36mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.4V @ 20mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
30mOhm @ 40A, 18V
Gate Charge (Qg) (Max) @ Vgs:
151 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTH4L022N120M3S Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/15667528
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
352W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3175 pF @ 800 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Current - Continuous Drain (Id) @ 25°C:
68A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
