NXP Semiconductors NX7002BKMBYL

NX7002BKMBYL NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs:
1 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2.8Ohm @ 200mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350mW (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
23.6 pF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
DFN1006B-3
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by NXP Semiconductors. The manufacturer part number is NX7002BKMBYL. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xfdfn. The maximum gate charge and given voltages include 1 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2.8ohm @ 200ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 350mw (ta), 3.1w (tc). The product's input capacitance at maximum includes 23.6 pf @ 10 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. dfn1006b-3 is the supplier device package value. The continuous current drain at 25°C is 350ma (ta). This product use mosfet (metal oxide) technology.

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NX7002BKMB(Datasheets)

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