NXP Semiconductors BUK752R3-40E,127
Product Information
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
109.2 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 25A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
293W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
8500 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Grade:
Automotive
Series:
TrenchMOS™
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is BUK752R3-40E,127. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 109.2 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2.3mohm @ 25a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 293w (ta). The product's input capacitance at maximum includes 8500 pf @ 25 v. The product is available in through hole configuration. The product is automotive, a grade of class. The product trenchmos™, is a highly preferred choice for users. to-220ab is the supplier device package value. The continuous current drain at 25°C is 120a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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