Deliver to
United Kingdom
This is manufactured by onsemi. The manufacturer part number is NTMT190N65S3H. It has a maximum of 650 v drain source voltage. While 16 a of maximum continuous drain current. The product is available in surface mount configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.19 ω maximum drain source resistance. The package is a sort of tdfn4. It consists of 1 elements per chip. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-powertsfn. It has a maximum Rds On and voltage of 190mohm @ 8a, 10v. The typical Vgs (th) (max) of the product is 4v @ 1.4ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 129w (tc). The product's input capacitance at maximum includes 1600 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. The maximum gate charge and given voltages include 31 nc @ 10 v. 4-tdfn (8x8) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
Basket Total:
£ 0
