onsemi NTMT190N65S3H
Product Information
Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
16 A
Mounting Type:
Surface Mount
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.19 Ω
Package Type:
TDFN4
Number of Elements per Chip:
1
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1.4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Rds On (Max) @ Id, Vgs:
190mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
129W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
4-TDFN (8x8)
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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You can order onsemi brand products with NTMT190N65S3H directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NTMT190N65S3H. You can also check on our website or by contacting our customer support team for further order details on onsemi NTMT190N65S3H.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21919631 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21919631.
Yes. We ship NTMT190N65S3H Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTMT190N65S3H. It has a maximum of 650 v drain source voltage. While 16 a of maximum continuous drain current. The product is available in surface mount configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.19 ω maximum drain source resistance. The package is a sort of tdfn4. It consists of 1 elements per chip. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1.4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-powertsfn. It has a maximum Rds On and voltage of 190mohm @ 8a, 10v. The maximum gate charge and given voltages include 31 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 129w (tc). The product's input capacitance at maximum includes 1600 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. 4-tdfn (8x8) is the supplier device package value. The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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