Forward Voltage Vf:
3.9V
Width:
9.7 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
33.8nC
Package Type:
TO-263
Maximum Continuous Drain Current Id:
19.5A
Product Type:
MOSFET & Diode
Maximum Drain Source Resistance Rds:
225mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
1200V
Channel Type:
Type N
Length:
15.1mm
Standards/Approvals:
Pb-Free, RoHS
Pin Count:
7
Mount Type:
Surface
Maximum Power Dissipation Pd:
136W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
NTB
Height:
4.3mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 2.5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
224mOhm @ 12A, 20V
Gate Charge (Qg) (Max) @ Vgs:
33.8 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTBG160N120SC1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/12180008
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
678 pF @ 800 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Current - Continuous Drain (Id) @ 25°C:
19.5A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG160
ECCN:
EAR99
