N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L ON Semiconductor NTBG160N120SC1
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NTB
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
225 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
19.5 A
Transistor Material:
Si
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 2.5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
224mOhm @ 12A, 20V
Gate Charge (Qg) (Max) @ Vgs:
33.8 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTBG160N120SC1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/12180008
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
678 pF @ 800 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Current - Continuous Drain (Id) @ 25°C:
19.5A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG160
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L ON Semiconductor NTBG160N120SC1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET Transistor & Diode, 19.5 A, 1200 V, 7-Pin D2PAK-7L ON Semiconductor NTBG160N120SC1.
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This is N-Channel MOSFET Transistor & Diode 19.5 A 1200 V 7-Pin D2PAK-7L ON Semiconductor manufactured by onsemi. The manufacturer part number is NTBG160N120SC1. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ntb, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 225 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 19.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.3v @ 2.5ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 224mohm @ 12a, 20v. The maximum gate charge and given voltages include 33.8 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 136w (tc). The product's input capacitance at maximum includes 678 pf @ 800 v. It has a long 12 weeks standard lead time. d2pak-7 is the supplier device package value. The continuous current drain at 25°C is 19.5a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to ntbg160, a base product number of the product. The product is designated with the ear99 code number.
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