SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 ON Semiconductor NTH4L080N120SC1
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
NTH
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.11 Ω
Package Type:
TO-247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
29 A
Transistor Material:
SiC
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1670 pF @ 800 V
standardLeadTime:
9 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Current - Continuous Drain (Id) @ 25°C:
29A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTH4L080
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 ON Semiconductor NTH4L080N120SC1. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET Transistor, 29 A, 1200 V, 4-Pin TO-247 ON Semiconductor NTH4L080N120SC1.
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This is SiC N-Channel MOSFET Transistor 29 A 1200 V 4-Pin TO-247 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTH4L080N120SC1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product nth, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.11 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.3v @ 5ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 110mohm @ 20a, 20v. The maximum gate charge and given voltages include 56 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -15v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 170w (tc). The product's input capacitance at maximum includes 1670 pf @ 800 v. It has a long 9 weeks standard lead time. to-247-4l is the supplier device package value. The continuous current drain at 25°C is 29a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to nth4l080, a base product number of the product. The product is designated with the ear99 code number.
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