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This is SiC N-Channel MOSFET Transistor 29 A 1200 V 4-Pin TO-247 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTH4L080N120SC1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product nth, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.11 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 110mohm @ 20a, 20v. The typical Vgs (th) (max) of the product is 4.3v @ 5ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -15v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 170w (tc). It has a long 17 weeks standard lead time. The product's input capacitance at maximum includes 1670 pf @ 800 v. The maximum gate charge and given voltages include 56 nc @ 20 v. to-247-4l is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 29a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to nth4l080, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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