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STMicroelectronics STO67N60DM6

STO67N60DM6 STMicroelectronics
STO67N60DM6
STO67N60DM6
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
600 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
STO67N60DM6
Channel Type:
N
Maximum Gate Threshold Voltage:
25V
Maximum Drain Source Resistance:
59 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerSFN
Rds On (Max) @ Id, Vgs:
59mOhm @ 23.75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
72.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STO67N60DM6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/13145240
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3400 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ DM6
Supplier Device Package:
TOLL (HV)
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STO67
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STO67N60DM6. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sto67n60dm6, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 25v of maximum gate threshold voltage. It provides up to 59 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powersfn. It has a maximum Rds On and voltage of 59mohm @ 23.75a, 10v. The maximum gate charge and given voltages include 72.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 3400 pf @ 100 v. It has a long 16 weeks standard lead time. The product is available in surface mount configuration. The product mdmesh™ dm6, is a highly preferred choice for users. toll (hv) is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sto67, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - STO67N60DM6(Technical Reference)
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STO67N60DM6(Datasheets)

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