STMicroelectronics SCTH50N120-7
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SCTH50N120-7
Channel Type:
N
Maximum Gate Threshold Voltage:
5.1V
Maximum Drain Source Resistance:
0.065 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
55 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.1V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 20 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
69mOhm @ 40A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
65A
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH50
ECCN:
EAR99
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Yes. We ship SCTH50N120-7 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is SCTH50N120-7. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product scth50n120-7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.1v of maximum gate threshold voltage. It provides up to 0.065 ω maximum drain source resistance. The package is a sort of h2pak-7. It consists of 1 elements per chip. While 55 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.1v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. The maximum gate charge and given voltages include 122 nc @ 20 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 69mohm @ 40a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. The product carries maximum power dissipation 270w (tc). The product's input capacitance at maximum includes 1900 pf @ 400 v. h2pak-7 is the supplier device package value. The continuous current drain at 25°C is 65a. This product use sicfet (silicon carbide) technology. Moreover, it corresponds to scth50, a base product number of the product. The product is designated with the ear99 code number.
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