Toshiba Semiconductor and Storage SSM3J65CTC,L3F

SSM3J65CTC-L3F Toshiba Semiconductor and Storage SSM3J65CTC,L3F
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 20V 700mA (Ta) 500mW (Ta) Surface Mount CST3C
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C
Package / Case:
SC-101, SOT-883
Base Part Number:
SSM3J65
Rds On (Max) @ Id, Vgs:
500mOhm @ 500mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
48pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVII
Supplier Device Package:
CST3C
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta)
Customer Reference:
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J65CTC,L3F. It has typical 12 weeks of manufacturer standard lead time. It features p-channel 20v 700ma (ta) 500mw (ta) surface mount cst3c. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in sc-101, sot-883. Base Part Number: ssm3j65. It has a maximum Rds On and voltage of 500mohm @ 500ma, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±10v. The product's input capacitance at maximum includes 48pf @ 10v. The product is available in surface mount configuration. The product u-mosvii, is a highly preferred choice for users. cst3c is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 700ma (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology.

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