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STMicroelectronics STF18N60M6

STF18N60M6 STMicroelectronics
STF18N60M6
STMicroelectronics

Product Information

Typical Gate Charge @ Vgs:
16.8 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
4.75V
Height:
16.4mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
13 A
Minimum Gate Threshold Voltage:
3.25V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STF18N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9997320
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 100 V
standardLeadTime:
14 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ M6
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF18
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STF18N60M6. With a typical gate charge at Vgs includes 16.8 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 25 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 4.75v of maximum gate threshold voltage. In addition, the height is 16.4mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 13 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3.25v. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 280mohm @ 6.5a, 10v. The maximum gate charge and given voltages include 16.8 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 25w (tc). The product's input capacitance at maximum includes 650 pf @ 100 v. It has a long 14 weeks standard lead time. The product mdmesh™ m6, is a highly preferred choice for users. to-220fp is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf18, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet STF18N60M6(Technical Reference)
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Datasheet - STF18N60M6(Technical Reference)
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STF18N60M6(Datasheets)

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Yes. We ship STF18N60M6 Internationally to many countries around the world.