STMicroelectronics STB45N30M5
Product Information
Typical Gate Charge @ Vgs:
95 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
5V
Height:
4.37mm
Width:
9.35mm
Length:
10.4mm
Maximum Drain Source Resistance:
40 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
53 A
Minimum Gate Threshold Voltage:
3V
Forward Diode Voltage:
1.5V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
40mOhm @ 26.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB45N30M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9664015
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4240 pF @ 100 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ M5
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB45
ECCN:
EAR99
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FAQs
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Yes. We ship STB45N30M5 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB45N30M5. With a typical gate charge at Vgs includes 95 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 250 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 4.37mm. Furthermore, the product is 9.35mm wide. Its accurate length is 10.4mm. It provides up to 40 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 53 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 40mohm @ 26.5a, 10v. The maximum gate charge and given voltages include 95 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 250w (tc). The product's input capacitance at maximum includes 4240 pf @ 100 v. It has a long 14 weeks standard lead time. The product mdmesh™ m5, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 53a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb45, a base product number of the product. The product is designated with the ear99 code number.
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