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N-Chanel 40 V (D-S) MOSFET PowerPAK 1212

SISC06DN-T1-GE3 N-Chanel 40 V (D-S) MOSFET PowerPAK 1212
Vishay Siliconix

Product Information

Maximum Continuous Drain Current:
40 A
Transistor Material:
Transistor Configuration:
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
Package Type:
Number of Elements per Chip:
Minimum Gate Threshold Voltage:
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38.5 nC @ 10 V
Channel Type:
Pin Count:
Channel Mode:
Mounting Type:
Surface Mount
Maximum Power Dissipation:
46.3 W
Maximum Gate Source Voltage:
-16 V, +20 V
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
Maximum Drain Source Resistance:
4 mΩ
FET Feature:
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 46.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2455 pF @ 15 V
14 Weeks
Mounting Type:
Surface Mount
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:
27.6A (Ta), 40A (Tc)
MOSFET (Metal Oxide)
Base Product Number:
Checking for live stock

This is N-Chanel 40 V (D-S) MOSFET PowerPAK 1212 manufactured by Vishay Siliconix. The manufacturer part number is SISC06DN-T1-GE3. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of 1212. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 38.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 46.3 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.7v . It provides up to 4 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. It has a maximum Rds On and voltage of 2.7mohm @ 15a, 10v. The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.7w (ta), 46.3w (tc). The product's input capacitance at maximum includes 2455 pf @ 15 v. It has a long 14 weeks standard lead time. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® 1212-8 is the supplier device package value. The continuous current drain at 25°C is 27.6a (ta), 40a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sisc06, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)
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Mult Dev 08/Dec/2022(PCN Design/Specification)


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