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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM60NB190CI C0G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack, isolated tab. It has a maximum Rds On and voltage of 190mohm @ 6a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1273 pf @ 100 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 31 nc @ 10 v. ito-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). The product carries maximum power dissipation 33.8w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tsm60, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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