Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Vishay Siliconix SIDR638DP-T1-GE3

SIDR638DP-T1-GE3 Vishay Siliconix
SIDR638DP-T1-GE3
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
0.88mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
204 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
Vendor Undefined
edacadModel:
SIDR638DP-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/7616338
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10500 pF @ 20 V
standardLeadTime:
62 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8DC
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIDR638
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIDR638DP-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 0.88mohm @ 20a, 10v. The maximum gate charge and given voltages include 204 nc @ 10 v. The product is rohs3 compliant. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 10500 pf @ 20 v. It has a long 62 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8dc is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sidr638, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
SIDR638DP(Datasheets)
pdf icon
PowerPak® SO-8 Outline(Datasheets)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search SIDR638DP-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865502. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIDR638DP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIDR638DP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIDR638DP-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865502 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865502.
Yes. We ship SIDR638DP-T1-GE3 Internationally to many countries around the world.